Click to expand full text
2SK1163, 2SK1164
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter
Outline
TO-3P
D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source
S
2SK1163, 2SK1164
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage 2SK1163 2SK1164 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.
2SK1163 Datasheet
