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2SK1336 - Silicon N-Channel MOSFET

Key Features

  • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source.
  • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-92 D G 32 1 1. Source 2. Drain 3. Gate S 2SK1336 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel tempe.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SK133 Silicon N-Channel MOSFET
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2SK1335L Silicon N-Channel MOSFET
2SK1335S Silicon N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK1336 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-92 D G 32 1 1. Source 2. Drain 3. Gate S 2SK1336 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% Symbol VDSS VGSS ID I D(pulse)* I DR Pch Tch Tstg 1 Ratings 60 ±20 0.3 1.2 0.