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2SK1622L - Silicon N-Channel MOS FET

Download the 2SK1622L datasheet PDF. This datasheet also covers the 2SK1622 variant, as both devices belong to the same silicon n-channel mos fet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low on-resistance.
  • High speed switching.
  • Low drive current.
  • 4 V gate drive device  Can be driven from 5 V source.
  • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline November 1996 LDPAK 4 4 123 D 12 3 G S 1. Gate 2. Drain 3. Source 4. Drain 2SK1622(L), 2SK1622(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode rever.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SK1622-HitachiSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
2SK1620 Silicon N-Channel MOS FET Renesas
2SK1620L Silicon N-Channel MOS FET Renesas
2SK1620S Silicon N-Channel MOS FET Renesas
2SK1623L N-Channel MOSFET INCHANGE
2SK1629 N-Channel MOSFET Transistor Inchange Semiconductor

Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SK1622 Silicon N-Channel MOS FET
2SK1622S Silicon N-Channel MOS FET
2SK1620 Silicon N-Channel MOSFET
2SK1620L Silicon N-Channel MOSFET
2SK1620S Silicon N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SK1622(L), 2SK1622(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline November 1996 LDPAK 4 4 123 D 12 3 G S 1. Gate 2. Drain 3. Source 4. Drain 2SK1622(L), 2SK1622(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW≤10 µs, duty cycle ≤ 1% 2.