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2SK1666 - Silicon N-Channel MOSFET

Key Features

  • Low on-resistance High speed switching Low drive current Low voltage drive device  Can be driven from 4 V.
  • Suitable for motor drive, solenoid drive , DC-DC converter and etc. Outline TO-3PFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK1666 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature.

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Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK1666 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current Low voltage drive device  Can be driven from 4 V • Suitable for motor drive, solenoid drive , DC-DC converter and etc. Outline TO-3PFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK1666 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.