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2SK1933 Datasheet Silicon N-channel MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 2SK1933 Silicon N-Channel MOS FET Application High speed power.

Key Features

  • Low on-resistance High speed switching No secondary breakdown Suitable for Switching regulator Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1933 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol.

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