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2SK1947 - Silicon N-Channel MOSFET

Key Features

  • Low on-resistance High speed switching Low Drive Current Built-In Fast Recovery Diode (trr = 140 ns) Suitable for Switching regulator, Motor Control Outline TO-3PL D G 1 2 3 S 1. Gate 2. Drain (Flange) 3. Source 2SK1947 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperatu.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SK1948 Silicon N-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK1947 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low Drive Current Built-In Fast Recovery Diode (trr = 140 ns) Suitable for Switching regulator, Motor Control Outline TO-3PL D G 1 2 3 S 1. Gate 2. Drain (Flange) 3. Source 2SK1947 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2.