• Part: 2SK2097
  • Description: Silicon N-Channel MOS FET
  • Manufacturer: Hitachi Semiconductor
  • Size: 33.73 KB
Download 2SK2097 Datasheet PDF
Hitachi Semiconductor
2SK2097
Features - - - - - Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter. Outline TO-220CFM 12 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)- I DR Pch- Tch Tstg 2 1 Ratings 600 ±30 4 16 4 35 150 - 55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 600 ±30 - - 2.0 - 2.2 - - - - - - - - - Typ - - - - - 1.8 3.5 600 140 25 8 30 60 35 0.9 300 Max - - ±10 250 3.0 2.4 - - - - - - - - - - Unit V V µA µA V Ω S p F p F p F ns ns ns ns V ns I...