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2SK217
Silicon N-Channel Junction FET
Application
VHF amplifier
Outline
MPAK
3 1 2
1. Gate 2. Drain 3. Source
2SK217
Absolute Maximum Ratings (Ta = 25°C)
Item Gate to drain current Drain current Gate current Channel power dissipation Channel temperature Storage temperature Symbol VGDO ID IG Pch Tch Tstg Ratings –30 20 10 150 150 –55 to +150 Unit V mA mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Gate to drain breakdown voltage Gate cutoff current Gate to source cutoff voltage Drain current Forward transfer admittance Reverse transfer capacitance Note: Grade Mark I DSS C ZC 2.5 to 5 D ZD 4 to 8 Symbol V(BR)GDO I GSS VGS(off) I DSS* |yfs| Crss
1
Min –30 — — 2.5 — — E ZE 6 to 12
Typ — — — — 8.0 0.1
Max — –10 –2.
2SK217 Datasheet
