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2SK2315 - Silicon N-Channel MOSFET

Key Features

  • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source. Suitable for DC-DC converter, motor drive, power switch, solenoid drive Outline UPAK 2 1 4 3 D G 1. Gate 2. Drain 3. Source 4. Drain S 2SK2315 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channe.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SK2328 Silicon N-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK2315 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source. Suitable for DC-DC converter, motor drive, power switch, solenoid drive Outline UPAK 2 1 4 3 D G 1. Gate 2. Drain 3. Source 4. Drain S 2SK2315 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 60 ±20 2 4 2 1 150 –55 to +150 Unit V V A A A W °C °C Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. When using the alumina ceramic board (12.5 × 20 × 0.7mm) 3.