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2SK2315 Datasheet Silicon N-channel MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 2SK2315 Silicon N-Channel MOS FET Application High speed power.

Key Features

  • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source. Suitable for DC-DC converter, motor drive, power switch, solenoid drive Outline UPAK 2 1 4 3 D G 1. Gate 2. Drain 3. Source 4. Drain S 2SK2315 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channe.

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