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2SK2685 - GaAs HEMT

Key Features

  • Excellent low noise characteristics. Fmin = 0.83 dB Typ. (3 V, 10 mA, 2 GHz).
  • High associated gain. Ga = 17 dB Typ. (3 V, 10 mA, 2 GHz).
  • High voltage. VDS = 6 or more voltage.
  • Small package. (CMPAK-4) Outline CMPAK.
  • 4 2 3 4 1 1. Source 2. Gate 3. Source 4. Drain 2SK2685 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Gate to drain voltage Drain current Channel power dissipation Channel temperature Storage te.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK2685 GaAs HEMT ADE-208-400 1st. Edition Application UHF low noise amplifier Features • Excellent low noise characteristics. Fmin = 0.83 dB Typ. (3 V, 10 mA, 2 GHz) • High associated gain. Ga = 17 dB Typ. (3 V, 10 mA, 2 GHz) • High voltage. VDS = 6 or more voltage. • Small package. (CMPAK-4) Outline CMPAK–4 2 3 4 1 1. Source 2. Gate 3. Source 4. Drain 2SK2685 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Gate to drain voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDSS VGSO VGDO ID Pch Tch Tstg Ratings 6 –6 –7 20 100 125 –55 to +125 Unit V V V mA mW °C °C Attention: This device is very sensitive to electro static discharge.