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2SK2685 - GaAs HEMT

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Hitachi Semiconductor

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2SK2685 GaAs HEMT by Hitachi Semiconductor - Datasheet Preview — Datasheet preview – 2SK2685

Datasheet Details

Part number	2SK2685
Manufacturer	Hitachi Semiconductor
File Size	49.79 KB
Description	GaAs HEMT
Datasheet	2SK2685 Datasheet
Additional preview pages of the 2SK2685 datasheet.

Product details

Features

Excellent low noise characteristics. Fmin = 0.83 dB Typ. (3 V, 10 mA, 2 GHz).
High associated gain. Ga = 17 dB Typ. (3 V, 10 mA, 2 GHz).
High voltage. VDS = 6 or more voltage.
Small package. (CMPAK-4) Outline CMPAK.
4 2 3 4 1 1. Source 2. Gate 3. Source 4. Drain 2SK2685 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Gate to drain voltage Drain current Channel power dissipation Channel temperature Storage te.

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Published: Mar 30, 2005 |