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2SK2685 Datasheet

Gaas Hemt

Manufacturer: Hitachi Semiconductor (now Renesas)

2SK2685 Overview

2SK2685 GaAs HEMT ADE-208-400 1st. Edition Application UHF low noise amplifier.

2SK2685 Key Features

  • Excellent low noise characteristics. Fmin = 0.83 dB Typ. (3 V, 10 mA, 2 GHz)
  • High associated gain. Ga = 17 dB Typ. (3 V, 10 mA, 2 GHz)
  • High voltage. VDS = 6 or more voltage
  • Small package. (CMPAK-4)

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2SK2685 Distributor