Click to expand full text
2SK2735(L), 2SK2735(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-543 1st. Edition Features
• Low on-resistance R DS = 20 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source
Outline
DPAK–2
4
4
D 1 2 G 3
S
1 2
3
1. Gate 2. Drain 3. Source 4. Drain
2SK2735(L), 2SK2735(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2.
2SK2735 Datasheet
