2SK2735L Datasheet Silicon N-channel Mos Fet

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 2SK2735(L), 2SK2735(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-543 1st.

Datasheet Details

Part number	2SK2735L
Manufacturer	Hitachi Semiconductor (now Renesas)
File Size	39.50 KB
Description	Silicon N-Channel MOS FET
Datasheet	2SK2735L_HitachiSemiconductor.pdf

Low on-resistance R DS = 20 mΩ typ.
High speed switching.
4V gate drive device can be driven from 5V source Outline DPAK.
2 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2735(L), 2SK2735(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty.

Brand Logo	Part Number	Description	Manufacturer
	2SK2735S	Silicon N-Channel MOSFET	Kexin