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2SK2926S - Silicon N-Channel MOSFET

Key Features

  • Low on-resistance R DS(on) = 0.042Ω typ.
  • 4V gate drive devices.
  • High speed switching Outline DPAK.
  • 2 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2926(L), 2SK2926(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SK2926 Silicon N-Channel MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK2926(L), 2SK2926(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-535 1st. Edition Features • Low on-resistance R DS(on) = 0.042Ω typ. • 4V gate drive devices. • High speed switching Outline DPAK–2 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2926(L), 2SK2926(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Ta = 25°C 3.