2SK2926S - Silicon N Channel MOS FET

Product Overview

Hitachi Semiconductor

Part number	2SK2926S
Manufacturer	Hitachi Semiconductor
File Size	53.16 KB
Description	Silicon N Channel MOS FET
Datasheet	2SK2926S Datasheet
Additional preview pages of the 2SK2926S datasheet.

Low on-resistance R DS(on) = 0.042Ω typ.
4V gate drive devices.
High speed switching Outline DPAK.
2 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2926(L), 2SK2926(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW.

📁 Similar Datasheet

2SK2920 - Silicon N-Channel MOS Type Field Effect Transistor (Toshiba Semiconductor)
2SK2927 - N-Channel MOSFET (INCHANGE)
2SK2928 - N-Channel MOSFET (Renesas)
2SK2900-01 - N-channel MOS-FET (Fuji Electric)
2SK2901-01L - N-CHANNEL SILICON POWER MOS-FET (Fuji Electric)
2SK2901-01S - N-CHANNEL SILICON POWER MOS-FET (Fuji Electric)
2SK2902-01MR - N-CHANNEL SILICON POWER MOS-FET (Fuji Electric)
2SK2903-01MR - N-CHANNEL SILICON POWER MOS-FET (Fuji Electric)

Other Datasheets by Hitachi Semiconductor

Published: Mar 30, 2005 |