2SK3155
2SK3155 is Silicon N-Channel MOSFET manufactured by Hitachi Semiconductor.
Features
- Low on-resistance R DS = 100 mΩ typ.
- High speed switching
- 4 V gate drive device can be driven from 5 V source
Outline
TO- 220FM
1 2 S
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP
Note3 Note3 Note2 Note1
Ratings 150 ±20 15 60 15 15 16 30 150
- 55 to +150
Unit V V A A A A m J W °C °C
Pch Tch
Tstg
1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics (Ta = 25°C)
Item Symbol Min 150 ±20
- - 1.0
- - 8.5
- -
- -
- -
- -
- Typ
- -
- -
- 0.10 0.12 14 850 300 160 13 100 195 110 0.9 140 Max
- - ±10 10 2.5 0.13...
