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2SK3155 Datasheet Silicon N-channel MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 2SK3155 Silicon N Channel MOS FET High Speed Power Switching ADE-208-768C (Z) 4th.

Key Features

  • Low on-resistance R DS = 100 mΩ typ.
  • High speed switching.
  • 4 V gate drive device can be driven from 5 V source Outline TO.
  • 220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 2SK3155 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID.

2SK3155 Distributor

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Renesas Logo 2SK3155 N-Channel MOSFET Renesas

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