2SK3155 Datasheet | Hitachi Semiconductor

Features - Low on-resistance R DS = 100 mΩ typ. - High speed switching - 4 V gate drive device can be driven from 5 V source Outline TO- 220FM 1 2 S 1. Gate 2. Drain 3. Source Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 150 ±20 15 60 15 15 16 30 150 - 55 to +150 Unit V V A A A A m J W °C °C Pch Tch Tstg 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25°C) Item Symbol Min 150 ±20 - - 1.0 - - 8.5 - - - - - - - - - Typ - - - - - 0.10 0.12 14 850 300 160 13 100 195 110 0.9 140 Max - - ±10 10 2.5 0.13 0.15 - - - - - - - - - - Unit V V µA µA V Ω Ω S p F p F p F ns ns ns ns V ns I F = 15 A, VGS = 0 I F = 15 A, VGS = 0 di F/ dt = 50 A/ µs Test Conditions I D = 10 m A, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 150 V, VGS = 0 I D = 1 m A, VDS = 10 V I D = 8 A, VGS = 10 VNote4 I D = 8 A, VGS = 4 V Note4 I D = 8 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz I D = 8 A, VGS = 10 V RL = 3.75 Ω Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body- drain diode forward voltage Body- drain diode reverse recovery time Note: 4. Pulse test I GSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr Main Characteristics Power vs. Temperature Derating 40 Pch (W) I D...