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2SK3378 Datasheet N-channel MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 2SK3378 Silicon N Channel MOS FET High Speed Switching ADE-208-805 (Z) 1st.Edition.

Key Features

  • Low on-resistance R DS =2.7 Ω typ. (V GS = 10 V , ID = 50 mA) R DS = 4.7 Ω typ. (VGS = 4 V , ID = 20 mA).
  • 4 V gate drive device.
  • Small package (CMPAK) Outline CMPAK 3 1 D 2 G 1. Source 2. Gate 3. Drain S 2SK3378 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pu.

2SK3378 Distributor