2SK3418 Description
2SK3418 Silicon N Channel MOS FET High Speed Power Switching.
2SK3418 Key Features
- Low on-resistance RDS(on) = 4.3 m typ
- 4 V gate drive device
- High speed switching
2SK3418 is Silicon N Channel MOS FET manufactured by Hitachi Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
Renesas |
2SK3418 | Silicon N-Channel MOSFET |
2SK3418 Silicon N Channel MOS FET High Speed Power Switching.