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2SK3418 - Silicon N Channel MOS FET

Key Features

  • Low on-resistance RDS(on) = 4.3 m typ.
  • 4 V gate drive device.
  • High speed switching Outline TO-220AB D G S ADE-208-941 (Z) 1st. Edition Mar. 2001 1 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK3418 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current VDSS VGSS ID I Note1 D (pulse) I DR Avalanche current Avalanche energy Channel dissipation I Note.

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2SK3418 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 4.3 m typ. • 4 V gate drive device • High speed switching Outline TO-220AB D G S ADE-208-941 (Z) 1st. Edition Mar. 2001 1 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK3418 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current VDSS VGSS ID I Note1 D (pulse) I DR Avalanche current Avalanche energy Channel dissipation I Note3 AP E Note3 AR Pch Note2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3.