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2SK522
Silicon N-Channel Junction FET
Application
VHF amplifier, Mixer, local oscillator
Outline
SPAK
1
23
1. Gate 2. Source 3. Drain
2SK522
Absolute Maximum Ratings (Ta = 25°C)
Item Gate to drain voltage Gate current Drain current Channel power dissipation Channel temperature Storage temperature Symbol VGDO IG ID Pch Tch Tstg Ratings –30 10 20 200 150 –55 to +150 Unit V mA mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Gate to drain breakdown voltage Gate cutoff current Drain current Gate to source cutoff voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Power gain Noise figure Note: Drain I DSS D 4 to 8 E 6 to 10 Symbol V(BR)GDO I GSS I DSS*
1
Min –30 — 4 — 8 — — 20 — F 10 to 20
Typ — — — — 10 6.8 0.1 27 1.7
Max — –10 20 –3 — — — — 2.
2SK522 Datasheet
