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2SK973 - Silicon N-Channel MOSFET

General Description

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Power vs.

Key Features

  • Low on-resistance High speed switching Low drive current 4 V gate drive device.
  • Can be driven from 5 V source.
  • Suitable for motor drive, DC-DC converter, power switch and solenoid drive 2, 4 12 3 12 3 S type 1. Gate 2. Drain 3. Source 4. Drain 3 L type 1 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel d.

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www.DataSheet4U.com 2SK973 L , 2SK973 S Silicon N-Channel MOS FET Application DPAK-1 4 4 High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive 2, 4 12 3 12 3 S type 1. Gate 2. Drain 3. Source 4.