3SK300 Overview
3SK300 Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier ADE-208-449 1st.
3SK300 Key Features
- Low noise figure NF = 1.0 dB typ. at f = 200 MHz
- High gain PG = 27.6 dB typ. at f = 200 MHz
3SK300 datasheet by Hitachi Semiconductor (now Renesas).
| Part number | 3SK300 |
|---|---|
| Datasheet | 3SK300_HitachiSemiconductor.pdf |
| File Size | 39.51 KB |
| Manufacturer | Hitachi Semiconductor (now Renesas) |
| Description | Silicon N-Channel Transistor |
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3SK300 Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier ADE-208-449 1st.
View all Hitachi Semiconductor (now Renesas) datasheets
| Part Number | Description |
|---|---|
| 3SK309 | UHF RF Amplifier |
| 3SK317 | UHF / VHF RF Amplifier |
| 3SK318 | UHF RF Amplifier |
| 3SK319 | UHF RF Amplifier |
| 3SK321 | Silicon N-Channel Dual Gate MOS FET |
| 3SK322 | Silicon N-Channel Dual Gate MOS FET |
| 3SK186 | Silicon N-Channel Dual Gate MOS FET |
| 3SK194 | Silicon N-Channel Dual Gate MOS FET |
| 3SK228 | Silicon NPN Triple Diffused |
| 3SK233 | Silicon N-Channel Dual Gate MOS FET |