3SK300 - Silicon N-Channel Transistor

Datasheet Summary

Features

Low noise figure NF = 1.0 dB typ. at f = 200 MHz.
High gain PG = 27.6 dB typ. at f = 200 MHz Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain 3SK300 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 14 ±8 ±8 25 150 150.
55 to +150 Unit V V V mA mW °C °C 2 3SK300 E.

Hitachi Semiconductor

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Datasheet Details

Part number	3SK300
Manufacturer	Hitachi Semiconductor
File Size	39.51 KB
Description	Silicon N-Channel Transistor
Datasheet	3SK300 Datasheet
Additional preview pages of the 3SK300 datasheet.

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Full PDF Text Transcription

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3SK300 Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier ADE-208-449 1st. Edition Features • Low noise figure NF = 1.0 dB typ. at f = 200 MHz • High gain PG = 27.6 dB typ. at f = 200 MHz Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4.

Published: Mar 30, 2005 |