3SK309 Description
3SK309 GaAs N Channel Dual Gate MES FET UHF RF Amplifier ADE-208-472 A 2nd.
3SK309 Key Features
- Capable of low voltage operation (VDS = 1.5 to 3 V)
- Excellent low noise characteristics (NF = 1.25 dB typ. at f = 900 MHz)
- High power gain (PG = 21.0 dB typ. at f = 900 MHz)