4AC12 Datasheet | Hitachi Semiconductor

Silicon NPN Epitaxial Application Low frequency power amplifier Outline SP-10 3 2 4 ID ID 9 8 ID 1, 10 Emitter 2, 4, 6, 8 Base 3, 5, 7, 9 Collector ID 10 5 Absolute Maximum Ratings (for each device, Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Diode current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) ID PC - 1 1 Ratings 27 27 7 2 4 2 4 28 150 - 55 to +150 Unit V V V A A A W °C °C - (TC = 25°C) Junction temperature Storage temperature Note: 1. 4 devices operation. Tj Tstg Electrical Characteristics (for each device, Ta = 25°C) Item Symbol Min 27 28 7 - - 7000 2000 - - - Typ - - - - - - - - - - Max - 36 - 10 10 30000 - 1.5 2.0 3.5 V V V Unit V V V µA Test conditions I C = 1 m A, IE = 0 I C = 1 A, L = 20 m H, RBE = ∞ I E = 5 m A, IC = 0 VCB = 20 V, IE = 0 VCE = 20 V, RBE = ∞ VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 2 A- 1 I C = 2 A, IB = 2 m A- 1 I C = 2 A, IB = 2 m A- 1 ID = 2 A Collector to emitter breakdown V(BR)CBO voltage Collector to emitter sustain voltage Emitter to base breakdown voltage Collector cutoff current VCEO(SUS) V(BR)EBO I CBO I CEO DC current transfer ratio h FE h FE Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward current Note: 1. Pulse test. VCE(sat) VBE(sat) VD Maximum Collector Dissipation Curve 6 Collector power dissipation PC (W) 4 device operation 30 Collector power dissipation PC (W) 3 device operation 4 2 device operation 1 device operation 2 4 device operation 3 device operation 20 2 device operation Maximum Collector Dissipation Curve 50 100 Ambient temperature Ta (°C) 1 device operation 0 50 100 Case temperature TC (°C) 150 Note: Collector power dissipation of each devices is identical. Area of Safe Operation 10 i C(peak) 1m Typical Output Characteristics 2.0...