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4AC12
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Outline
SP-10 3 2 4 ID ID 9 8 ID 1, 10 Emitter 2, 4, 6, 8 Base 3, 5, 7, 9 Collector ID 10 5
1
1
7
10
6
4AC12
Absolute Maximum Ratings (for each device, Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Diode current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) ID PC *
1 1
Ratings 27 27 7 2 4 2 4 28 150 –55 to +150
Unit V V V A A A W °C °C
PC * (TC = 25°C) Junction temperature Storage temperature Note: 1. 4 devices operation. Tj Tstg
Electrical Characteristics (for each device, Ta = 25°C)
Item Symbol Min 27 28 7 — — 7000 2000 — — — Typ — — — — — — — — — — Max — 36 — 10 10 30000 — 1.5 2.0 3.
4AC12 Datasheet
