4AJ11 - Silicon P-Channel Power MOS FET Array

Datasheet Summary

Features

Low on-resistance R DS(on) 0.13 , VGS =.
10 V, I D =.
4 A R DS(on) 0.17 , VGS =.
4 V, I D =.
4 A.
Capable of 4 V gate drive.
Low drive current.
High speed switching.
High density mounting.
Suitable for motor driver and solenoid driver and lamp driver 4AJ11 Outline SP-12 12 1 G 2 D 5 G 4 D 8 G 9 D 12 G 11 D 34 56 78 9 10 1112 S 3 S 6 S 7 S 10 1, 5, 8, 12. Gate 2, 4, 9, 11. Drain 3, 6, 7, 10. Source A.

Hitachi Semiconductor

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Datasheet Details

Part number	4AJ11
Manufacturer	Hitachi Semiconductor
File Size	35.59 KB
Description	Silicon P-Channel Power MOS FET Array
Datasheet	4AJ11 Datasheet
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4AJ11 Silicon P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) 0.13 , VGS = –10 V, I D = –4 A R DS(on) 0.17 , VGS = –4 V, I D = –4 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mounting • Suitable for motor driver and solenoid driver and lamp driver 4AJ11 Outline SP-12 12 1 G 2 D 5 G 4 D 8 G 9 D 12 G 11 D 34 56 78 9 10 1112 S 3 S 6 S 7 S 10 1, 5, 8, 12. Gate 2, 4, 9, 11. Drain 3, 6, 7, 10. Source Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.

Published: Apr 1, 2005 |