4AJ11 Description
4AJ11 Silicon P-Channel Power MOS FET Array Application High speed power switching.
4AJ11 Key Features
- Low on-resistance R DS(on) 0.13 , VGS = -10 V, I D = -4 A R DS(on) 0.17 , VGS = -4 V, I D = -4 A
- Capable of 4 V gate drive
- Low drive current
- High speed switching
- High density mounting
- Suitable for motor driver and solenoid driver and lamp driver