C2612 Datasheet | Hitachi Semiconductor

2SC2612 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-220AB 1 23 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Base current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) IB PC - 1 Tj Tstg 1. Base 2. Collector (Flange) 3. Emitter Ratings 500 400 7 3 6 1.5 30 150 - 55 to +150 Unit V V V A A A W °C °C 2SC2612 Electrical Characteristics (Ta = 25°C) Item Collector to emitter sustain voltage Symbol Min VCEO(sus) VCEX(sus) Typ - - Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Turn on time Storage time Fall time Note: 1. Pulse test V(BR)EBO I CBO I CEO h FE1 h FE2 VCE(sat) VBE(sat) t on t stg tf - - 15 7 - - - - - - - - - -...