Datasheet4U Logo Datasheet4U.com

C5022 - 2SC5022

Key Features

  • High breakdown voltage V (BR)CEO = 1500 V Min Outline TO-220FM www. DataSheet. co. kr 12 3 1. Base 2. Collector 3. Emitter Datasheet pdf - http://www. DataSheet4U. net/ 2SC5022 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC I C (peak) PC Tj Tstg Ratings 1500 1500 6 20 40 2 150.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
C502 8-Bit CMOS Microcontroller Siemens
C502 PCI Dual Port Sync Board Manual Moxa
C5020 50A AVALANCHE AUTOMOTIVE CELL DIODE Won-Top Electronics
C5021CT-036 UPC5021 NEC
C5023 2SC5023 Hitachi

Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
C5024 Silicon NPN Epitaxial
C5057 Silicon NPN Triple Diffused Planar

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SC5022 Silicon NPN Triple Diffused Application High voltage amplifier Features • High breakdown voltage V (BR)CEO = 1500 V Min Outline TO-220FM www.DataSheet.co.kr 12 3 1. Base 2. Collector 3. Emitter Datasheet pdf - http://www.DataSheet4U.