Datasheet4U Logo Datasheet4U.com

C5252 - 2SC5252

Key Features

  • High breakdown voltage VCBO = 1500 V.
  • High speed switching tf ≤ 0.15 µsec(typ. ).
  • Isolated package TO.
  • 3P.
  • FM Outline TO-3PFM 1. Base 2. Collector 3. Emitter 1 2 3 www. DataSheet4U. com 2SC5252 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. TC = 25°C Symbol VCB.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
C5250 2SC5250 Renesas
C5250 VCXO 5X7 Surface Mount Package Reflow Process Compatible Optional ACMOS Vectron International
C5254 2SC5254 Toshiba
C5255 2SC5255 Toshiba
C5258 2SC5258 Toshiba

Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
C5251 2SC5251
C5207A Silicon NPN Transistor
C5247 2SC5247

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com 2SC5252 Silicon NPN Triple Diffused Planar ADE-208-391A (Z) 2nd. Edition Application Character display horizontal deflection output Features • High breakdown voltage VCBO = 1500 V • High speed switching tf ≤ 0.15 µsec(typ.) • Isolated package TO–3P•FM Outline TO-3PFM 1. Base 2. Collector 3. Emitter 1 2 3 www.DataSheet4U.com 2SC5252 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1.