C5812 - 2SC5812

Datasheet Summary

Features

High power gain, Low noise figure at low power operation: |S21|2 = 17 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz) Outline MFPAK Note: Marking is “WG.
“. 3 1 2 1. Emitter 2. Base 3. Collector 2SC5812 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 4 1.5.

Hitachi Semiconductor

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Datasheet Details

Part number	C5812
Manufacturer	Hitachi Semiconductor
File Size	89.23 KB
Description	2SC5812
Datasheet	C5812 Datasheet
Additional preview pages of the C5812 datasheet.

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Full PDF Text Transcription

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2SC5812 Silicon NPN Epitaxial VHF/UHF wide band amplifier ADE-208-1468(Z) Rev.0 Nov. 2001 Features • High power gain, Low noise figure at low power operation: |S21|2 = 17 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz) Outline MFPAK Note: Marking is “WG–“. 3 1 2 1. Emitter 2. Base 3. Collector 2SC5812 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 4 1.

Published: Jun 11, 2016 |