D1367 Datasheet | Hitachi Semiconductor

2SD1367 Silicon NPN Epitaxial Application - Low frequency power amplifier - plementary pair with 2SB1001 Outline UPAK 1 3 2 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1367 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC i C(peak)- PC - Tj Tstg 2 1 Ratings 20 16 6 2 3 1 150 - 55 to +150 Unit V V V A A W °C °C Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20%. 2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 20 16 6 - - Typ - - - - Max - - - 0.1 0.1 Unit V V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 m A, RBE = ∞ I E = 10 µA, IC = 0 VCB = 16 V, IE = 0 VEB = 5 V, IC = 0 VCE = 2 V, IC = 0.1 A, Pulse Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Gain bandwidth product Collector output capacitance Note: Mark h FE BA 100 to 200 BB 160 to 320 V(BR)EBO I CBO I EBO h FE- - - - - BC - 0.15 0.9 100 20 500 0.3 1.2 - - V V MHz p F VCE(sat) VBE(sat) f T Cob I C = 1 A, IB = 0.1 A, Pulse I C = 1 A, IB = 0.1 A, Pulse VCE = 2 V, IC = 10 m A VCB = 10 V, IE = 0, f = 1...