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D1367 - 2SD1367

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Part number D1367
Manufacturer Hitachi Semiconductor
File Size 30.79 KB
Description 2SD1367
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2SD1367 Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB1001 Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1367 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak)* PC * Tj Tstg 2 1 Ratings 20 16 6 2 3 1 150 –55 to +150 Unit V V V A A W °C °C Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20%. 2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm) Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 20 16 6 — — 1 Typ — — — — Max — — — 0.1 0.
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