HA1127FP Datasheet | Hitachi Semiconductor

HA1127, HA1127P, HA1127FP 5 Transistor Arrays Pin Arrangement HA1127, HA1127P, HA1127FP Absolute Maximum Ratings (Ta = 25°C) Item Collector base voltage Collector substrate voltage Collector emitter voltage Emitter-base voltage Collector current Allowable collector power Allowable collector power Symbol VCBO VCIO VCEO VEBO IC PC- PC Topr Tstg HA1127 20 20 15 5 50 300 750- 625- 2 3 Unit V V V V m A m W m W Operating temperature Storage temperature - 55 to +125 - 55 to +125 °C °C Notes: 1. Allowable value per individual transistor. This is the allowable value up to Ta = 25°C. Derate at 3 m W/°C above that temperature. 2. Allowable value for the whole package. This is the allowable value up to Ta = 35°C for the HA1127P. Derate at 8.3 m W/°C above that temperature. 3. See page 51. HA1127, HA1127P, HA1127FP Electrical Characteristics (Ta = 25°C) Item Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-substrate breakdown voltage Emitter-base breakdown voltage Collector cutoff current Collector-emitter saturation voltage Base-emitter voltage DC current amplification ratio Gain-bandwidth product Collector output capacitance Emitter input capacitance Switching time Symbol V(BR)CBO V(BR)CEO V(BR)CIO V(BR)EBO ICBO ICEO VCE(sat) VBE h FE f T Cob Cin ton toff tstg Min 20 15 20 5 - - - - - 40 - - - - - - - Typ - - - - Max - - - - Unit V V V V n A µA V V V VEE = 3 V MHz p F p F ns ns ns VCE = 3 V, IC = 3 m A VCB = 3 V, IE = 0, f = 1 MHz VCB = 3 V, IE = 0, f = 1 MHz VCC = 10 V, IC = 10IB1 = - 10IB2 = 10 m A Test Condition IC = 10 µA, IE = 0 IC = 1 m A, R BE = IC = 10 µA, IE = 0, IB = 0 IE = 10 µA, IC = 0 VCB = 10 V, IE = 0 VCE = 10 V, R BE = IC = 10 m A, IB = 1 m A VCE = 3 V IC = 1 m A IC = 10 m A IC = 1 m A IC = 10 m A 0.002 40 - 0.17 0.72 0.80 140 120 460 1.7 2.0 35 130 75 0.5 - - - - - - - - - - -...