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HAT1020R Datasheet Silicon P-channel Power MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: HAT1020R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-435 H (Z) 9th.

Key Features

  • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP.
  • 8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT1020R Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings.
  • 30 ± 20.
  • 5.
  • 40.
  • 5 Unit V V A A A W °C °C Body.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Renesas Logo HAT1020R Silicon P-Channel Power MOSFET Renesas

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HAT1020R Distributor