The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
HAT1023R
Silicon P Channel Power MOS FET High Speed Power Switching
ADE-208-436 G (Z) 8th. Edition June 1997 Features
• • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting
Outline
SOP–8
8 5 7 6
5 6 7 8 D D D D
3 1 2
4
4 G
1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain
S S S 1 2 3
HAT1023R
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse)
Note1
Ratings –20 ±10 –7 –56 –7
Unit V V A A A W °C °C
Body–drain diode reverse drain current I DR Channel dissipation Channel temperature Storage temperature Note: Pch Tch Tstg
Note2
2.5 150 –55 to +150
1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. When using the glass epoxy board (FR4 40 x 40 x 1.
HAT1023R Datasheet
