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HAT1025R
Silicon P Channel Power MOS FET High Speed Power Switching
ADE-208-437 H (Z) 9th. Edition February 1999 Features
• • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting
Outline
SOP–8
8 5 7 6
3 1 2 7 8 D D 5 6 D D
4
2 G
4 G
S1
S3
1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain
MOS1
MOS2
HAT1025R
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse)
Note1
Ratings – 20 ± 10 – 4.5 – 36 – 4.5
Unit V V A A A W W °C °C
Body–drain diode reverse drain current I DR Channel dissipation Channel dissipation Channel temperature Storage temperature Note: Pch Pch Tch Tstg
Note2 Note3
2 3 150 – 55 to + 150
1. PW ≤ 10 µs, duty cycle ≤ 1 % 2.
HAT1025R Datasheet
