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HAT1025R Datasheet Silicon P-channel Power MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: HAT1025R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-437 H (Z) 9th.

Key Features

  • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline SOP.
  • 8 8 5 7 6 3 1 2 7 8 D D 5 6 D D 4 2 G 4 G S1 S3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain MOS1 MOS2 HAT1025R Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings.
  • 20 ± 10.
  • 4.5.
  • 36.
  • 4.5 Unit V V.

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