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HAT2039R Datasheet Silicon N-channel Power MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: HAT2039R Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-667C (Z) 4th.

Key Features

  • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline SOP.
  • 8 8 5 7 6 3 1 2 7 8 D D 5 6 D D 4 2 G 4 G S1 S3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain MOS1 MOS2 HAT2039R Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperat.

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