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HAT2053M - Silicon N-Channel Power MOSFET

Key Features

  • Low on-resistance Low drive current High density mounting 2.5V gate drive device can be driven from 3V source Outline TSOP.
  • 6 4 5 6 3 2 1 1 2 5 6 D D D D 3 G 4 Source 3 Gate 1, 2, 5, 6 Drain S 4 HAT2053M Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Symbol VDSS VGSS ID.
  • 2 1 Ratings 20 ±12 6.1 24.4 6.1 2 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HAT2053M Silicon N Channel Power MOS FET Power Switching ADE-208-755B(Z) Preliminary 3rd. Edition December 1998 Features • • • • Low on-resistance Low drive current High density mounting 2.5V gate drive device can be driven from 3V source Outline TSOP–6 4 5 6 3 2 1 1 2 5 6 D D D D 3 G 4 Source 3 Gate 1, 2, 5, 6 Drain S 4 HAT2053M Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Symbol VDSS VGSS ID* 2 1 Ratings 20 ±12 6.1 24.4 6.1 2 3 Unit V V A A A W W °C °C I D(pulse) * I DR* 2 Pch (pulse)* 2.0 1.05 150 –55 to +150 Pch (continuous) * Channel temperature Storage temperature Tch Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2.