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HL7859MG Datasheet Visible High Power Laser Diode

Manufacturer: Hitachi Semiconductor (now Renesas)

General Description

The HL7859MG is a 0.78 µm band GaAlAs laser diode with a multi-quantum well (MQW)structure.

It is suitable as a light source for optical disc memories and various other types of optical equipment.

Hermetic sealing of the small package (φ5.6 mm) assures high reliability.

Overview

HL7859MG Visible High Power Laser Diode.

Key Features

  • High output power Visible light output Small package Low astigmatism : 35 mW (CW) : λp = 775 to 795 nm : φ 5.6 mm dia. : 5 µm Typ (P O = 5 mW) 185 HL7859MG Absolute Maximum Ratings (TC = 25°C) Item Optical output power Pulse optical output power Laser diode reverse voltage Symbol PO PO (pulse) VR(LD) Value 35 42.
  • 2 30.
  • 10 to +60.
  • 40 to +85 Unit mW mW V V °C °C Photo diode reverse voltage VR(PD) Operating temperature Storage temperat.