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HL8325G

Manufacturer: Hitachi Semiconductor (now Renesas)
HL8325G datasheet preview

Datasheet Details

Part number HL8325G
Datasheet HL8325G_HitachiSemiconductor.pdf
File Size 21.55 KB
Manufacturer Hitachi Semiconductor (now Renesas)
Description GaAlAs Laser Diode
HL8325G page 2 HL8325G page 3

HL8325G Overview

The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suited for operation on a single positive supply voltage. It is suitable as a light source for optical disk memories, card readers and various other types of optical equipment.

HL8325G Key Features

  • Infrared light output: λp = 820 to 840 nm High power: standard continuous operation at 40 mW (CW), pulsed operation at 5
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