HL8325G Datasheet | Hitachi Semiconductor

Ga Al As Laser Diode Description The HL8325G is a high-power 0.8 µm band Ga Al As laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suited for operation on a single positive supply voltage. It is suitable as a light source for optical disk memories, card readers and various other types of optical equipment. Features - - - - Infrared light output: λp = 820 to 840 nm High power: standard continuous operation at 40 m W (CW), pulsed operation at 50 m W Built-in monitor photodiode Single longitudinal...