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HM628128A - High Speed CMOS Static RAM

General Description

Pin name A0 A16 I/O0 I/O7 CS1 CS2 WE Function Address Input/output Chip select 1 Chip select 2 Write enable Pin name OE NC VCC VSS Function Output enable No connection Power supply Ground DataSheet4U.com 3 DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com HM628128A Serie

Key Features

  • High speed.
  • Fast access time: 55/70/85/100 ns (max).
  • Low power.
  • Active: 75 mW (typ) It offers low power standby power dissipation; therefore, it is suitable for battery back-up systems.
  • Standby: 10 µW (typ) The device, packaged in a 525-mil SOP (460-mil.
  • Single 5 V supply body SOP) or a 600-mil plastic DIP, or a 8 × 20.
  • Completely static memory mm TSOP with thickness of 1.2 mm, is available No clock or timing strobe required for h.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
HM628128 1 M SRAM (128-kword x 8-bit)
HM628128B 1 M SRAM (128-KWORD X 8 BIT)
HM628128DI 1 M SRAM (128-kword X 8-bit)
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com ADE-XXX-XXX HM628128A Series 131,072-word × 8-bit High Speed CMOS Static RAM Rev. X January 1995 The Hitachi HM628128A is a CMOS static RAM organized 128 kword × 8 bit. It realizes higher density, higher performance and low power consumption by employing 0.8 µm Hi-CMOS process technology. Features • High speed — Fast access time: 55/70/85/100 ns (max) • Low power — Active: 75 mW (typ) It offers low power standby power dissipation; therefore, it is suitable for battery back-up systems. — Standby: 10 µW (typ) The device, packaged in a 525-mil SOP (460-mil • Single 5 V supply body SOP) or a 600-mil plastic DIP, or a 8 × 20 • Completely static memory mm TSOP with thickness of 1.2 mm, is available No clock or timing strobe required for high density mounting.