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HM62V16256C - 4 M SRAM (256-kword x 16-bit)

General Description

The Hitachi HM62V16256C Series is 4-Mbit static RAM organized 262,144-word × 16-bit.

HM62V16256C Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell).

Key Features

  • Single 2.5 V and 3.0 V supply: 2.2 V to 3.6 V Fast access time: 55 ns/70 ns (max) Power dissipation:  Active: 5.0 mW/MHz (typ)(VCC = 2.5 V) : 6.0 mW/MHz (typ) (VCC = 3.0 V)  Standby: 2 µW (typ) (VCC = 2.5 V) : 2.4 µW (typ) (V CC = 3.0 V) Completely static memory.  No clock or timing strobe required Equal access and cycle times Common data input and output.  Three state output Battery backup operation.  2 chip selection for battery backup.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

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HM62V16256CI Wide Temperature Range Version4 M SRAM (256-kword x 16-bit)
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Full PDF Text Transcription (Reference)

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HM62V16256C Series 4 M SRAM (256-kword × 16-bit) ADE-203-1099D (Z) Rev. 1.0 Jan. 31, 2001 Description The Hitachi HM62V16256C Series is 4-Mbit static RAM organized 262,144-word × 16-bit. HM62V16256C Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-transistor memory cell). It offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It is packaged in standard 44-pin plastic TSOPII. Features • • • Single 2.5 V and 3.0 V supply: 2.2 V to 3.6 V Fast access time: 55 ns/70 ns (max) Power dissipation:  Active: 5.0 mW/MHz (typ)(VCC = 2.5 V) : 6.0 mW/MHz (typ) (VCC = 3.0 V)  Standby: 2 µW (typ) (VCC = 2.5 V) : 2.4 µW (typ) (V CC = 3.0 V) Completely static memory.