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HN29V51211 Datasheet

512m And Type Flash Memory More Than 32/113-sector (542/581/248-bit)

Manufacturer: Hitachi Semiconductor (now Renesas)

HN29V51211 Overview

The Hitachi HN29V51211 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.0 V power supply. The functions are controlled by simple external mands.

HN29V51211 Key Features

  • On-board single power supply (VCC): VCC = 2.7 V to 3.6 V
  • Organization  AND Flash Memory: (2048 + 64) bytes × (More than 32,113 sectors)  Data register: (2048 + 64) bytes
  • Multi-level memory cell  2 bit/per memory cell
  • Automatic programming  Sector program time: 1.0 ms (typ)  System bus free  Address, data latch function  Internal au
  • Automatic erase  Single sector erase time: 1.0 ms (typ)  System bus free  Internal automatic erase verify function 
  • Erase mode  Single sector erase ((2048 + 64) byte unit)
  • Fast serial read access time:  First access time: 50 µs (max)  Serial access time: 50 ns (max)
  • The following architecture is required for data reliability.  Error correction: more than 3-bit error correction per ea
  • I/O0 to I/O7 Data input buffer Input data contr

HN29V51211 Applications

  • On-board single power supply (VCC): VCC = 2.7 V to 3.6 V

HN29V51211 Distributor