HN29W25611 Overview
The Hitachi HN29W25611 Series is a CMOS Flash Memory with AND type multi-level memory cells. It has fully automatic programming and erase capabilities with a single 3.3 V power supply. The functions are controlled by simple external mands.
HN29W25611 Key Features
- On-board single power supply (VCC): VCC = 3.3 V ± 0.3 V
- Organization AND Flash Memory: (2048 + 64) bytes × (More than 16,057 sectors) Data register: (2048 + 64) bytes
- Multi-level memory cell 2 bit/per memory cell
- Automatic programming Sector program time: 3.0 ms (typ) System bus free Address, data latch function Internal au
- Automatic erase Single sector erase time: 1.5 ms (typ) System bus free Internal automatic erase verify function
- Erase mode Single sector erase ((2048 + 64) byte unit)
- Fast serial read access time: First access time: 50 µs (max) Serial access time: 50 ns (max)
- The following architecture is required for data reliability. Error correction: more than 3-bit error correction per ea
- I/O0 to I/O7 Data input buffer Input data control
- Y-address counter