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HN58X2404SI - Two-wire serial interface (2k EEPROM 256-word x 8-bit) 4k EEPROM (512-word x 8-bit)

General Description

HN58X24xxSI series are two-wire serial interface EEPROM (Electrically Erasable and Programmable ROM).

They realize high speed, low power consumption and a high level of reliability by employing advanced MNOS memory technology and CMOS process and low voltage circuitry technology.

Key Features

  • Single supply: 1.8 V to 5.5 V Two-wire serial interface (I2CTM serial bus.
  • 1) Clock frequency: 400 kHz Power dissipation:  Standby: 3 µA (max)  Active (Read): 1 mA (max)  Active (Write): 3 mA (max) Automatic page write: 8-byte/page Write cycle time: 10 ms (2.7 V to 5.5 V)/15ms (1.8 V to 2.7 V) Endurance: 10 5 Cycles (Page write mode) Data retention: 10 Years.
  • HN58X2402SI/HN58X2404SI.
  • Small size packa.

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HN58X2416I Two-wire serial interface 16k EEPROM (2-kword x 8-bit) Hitachi
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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
HN58X2404 EEPROM
HN58X2402 EEPROM
HN58X2402SI EEPROM
HN58X2408 EEPROM
HN58X2408I Two-wire serial interface 8k EEPROM (1-kword x 8-bit)

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HN58X2402SI/HN58X2404SI Two-wire serial interface 2k EEPROM (256-word × 8-bit) 4k EEPROM (512-word × 8-bit) ADE-203-1105A (Z) Rev. 1.0 Nov. 30, 2000 Description HN58X24xxSI series are two-wire serial interface EEPROM (Electrically Erasable and Programmable ROM). They realize high speed, low power consumption and a high level of reliability by employing advanced MNOS memory technology and CMOS process and low voltage circuitry technology. They also have a 8-byte page programming function to make their write operation faster. Note: Hitachi’s serial EEPROM are authorized for using consumer applications such as cellular phone, camcorders, audio equipment.