HRW0202B - Silicon Schottky Barrier Diode for Rectifying
Hitachi Semiconductor (now Renesas)
Key Features
Low forward voltage drop and suitable for high effifiency rectifying.
MPAK Package is suitable for high density surface mounting and high speed assembly. Ordering Information
Type No. HRW0202B Laser Mark S18 Package Code MPAK
Outline
3
2
1
(Top View)
1 Anode 2 Anode 3 Cathode
HRW0202B
Absolute Maximum Ratings (Ta = 25°C).
1
Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperatu.
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HRW0202B
Silicon Schottky Barrier Diode for Rectifying
ADE-208-345A (Z) Rev 1 Oct. 1997 Features
• Low forward voltage drop and suitable for high effifiency rectifying. • MPAK Package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HRW0202B Laser Mark S18 Package Code MPAK
Outline
3
2
1
(Top View)
1 Anode 2 Anode 3 Cathode
HRW0202B
Absolute Maximum Ratings (Ta = 25°C) *1
Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Symbol V
*2 RRM
Value 20 200
Unit V mA A °C °C
I O*2 I FSM Tj Tstg
*3
3 125 -55 to +125
Notes 1. Two device total Notes 2. See from Fig.4 to Fig.7 Notes 3.
HRW0202B Datasheet
