HVC358B - Variable Capacitance Diode for VCO

Product Overview

Hitachi Semiconductor

Part number	HVC358B
Manufacturer	Hitachi Semiconductor
File Size	24.90 KB
Description	Variable Capacitance Diode for VCO
Datasheet	HVC358B Datasheet
Additional preview pages of the HVC358B datasheet.

High capacitance ratio. (n =2.20.min) Low series resistance. (rs=0.4 max) Good C-V linearity. Ultra small Flat Package (UFP) is suitable for surface mount design. Ordering Information Type No. HVC358B Laser Mark B2 Package Code UFP Outline Cathode mark Mark 1 B2 2 1. Cathode 2. Anode HVC358B Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Value 15 125 -55 to +125 Unit V °C °C Elect.

📁 Similar Datasheet

HVC35 - (HVC Series) 100mA High Voltage Silicon Rectifiers (International Semiconductor)
HVC3512 - High Voltage Thick Film Chip Resistors (Stackpole Electronics)
HVC35R - (HVC Series) 100mA High Voltage Silicon Rectifiers (International Semiconductor)
HVC30 - (HVC Series) 100mA High Voltage Silicon Rectifiers (International Semiconductor)
HVC300C - Variable Capacitance Diode (Renesas Technology)
HVC306 - Variable Capacitance Diode for VHF Tuner (Leshan Radio Company)
HVC306A - Variable Capacitance Diode for VHF Tuner (Leshan Radio Company)
HVC308A - Variable Capacitance Diode for TV Tuner (Leshan Radio Company)

Other Datasheets by Hitachi Semiconductor

Published: Mar 26, 2005 |