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HVM14S - Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator

Key Features

  • Low forward resistance. (rf =7.0Ωmax).
  • Low capacitance. (C=0.25pF typ).
  • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HVM14S Laser Mark H6 Package Code MPAK Outline 3 2 1 1 Cathode2 2 Anode1 3 Cathode1 Anode2 (Top View) HVM14S Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Note: Symbol VR IF Pd Tj Tstg.
  • 1.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
HVM14SR Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HVM14S Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator ADE-208-083D(Z) Rev.4 Feb.1999 Features • Low forward resistance. (rf =7.0Ωmax) • Low capacitance. (C=0.25pF typ) • MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HVM14S Laser Mark H6 Package Code MPAK Outline 3 2 1 1 Cathode2 2 Anode1 3 Cathode1 Anode2 (Top View) HVM14S Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Note: Symbol VR IF Pd Tj Tstg *1 Value 50 50 100 125 -55to+125 Unit V mA mW °C °C 1. Two device total.