J291 Overview
2SJ291 Silicon P-Channel MOS FET November 1996 .. Application High speed power switching.
J291 Key Features
- Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable fo
Datasheet Details
| Part number | J291 |
|---|---|
| Datasheet | J291_HitachiSemiconductor.pdf |
| File Size | 80.32 KB |
| Manufacturer | Hitachi Semiconductor (now Renesas) |
| Description | 2SJ291 |
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