Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings
Outline
TO-220AB
D G
1
2
3 1. Gate 2. Drain (Flange) 3. Source
S
2SJ291
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current
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J291. For precise diagrams, and layout, please refer to the original PDF.
2SJ291 Silicon P-Channel MOS FET November 1996 www.DataSheet4U.com Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low ...
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ching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SJ291 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current www.DataSheet4U.com Avalanche current Symbol VDSS VGSS ID ID(pulse)* IDR IAP* 3 1 Ratings –60 ±20 –20 –80 –20 –20 Unit V V A A A A mJ W °C °C Avalanche energy Channel dissipation Channel tem
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J291 Datasheet
