• Part: J291
  • Description: 2SJ291
  • Manufacturer: Hitachi Semiconductor
  • Size: 80.32 KB
Download J291 Datasheet PDF
Hitachi Semiconductor
J291
J291 is 2SJ291 manufactured by Hitachi Semiconductor.
Features - - - - - - Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Avalanche ratings Outline TO-220AB 3 1. Gate 2. Drain (Flange) 3. Source 2SJ291 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current .. Avalanche current Symbol VDSS VGSS ID ID(pulse)- IDR IAP- 3 1 Ratings - 60 ±20 - 20 - 80 - 20 - 20 Unit V V A A A A m J W °C °C Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω EAR- Tch Pch- 60 150 - 55 to +150 Tstg 2SJ291 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current .. Symbol Min V(BR)DSS V(BR)GSS IGSS VGS(off) RDS(on) - 60 ±20 - - -...