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J527 - 2SJ527

Key Features

  • Low on-resistance R DS(on) = 0.3 Ω typ.
  • Low drive current.
  • 4 V gete drive devices.
  • High speed switching Outline DPAK-1 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain Datasheet pdf - http://www. DataSheet4U. net/ www. DataSheet. co. kr 2SJ527(L),2SJ527(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalenche current Avalenche e.

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Part Number Description Manufacturer
J525 2SJ525 Toshiba

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr 2SJ527(L),2SJ527(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-640A (Z) 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.3 Ω typ. • Low drive current • 4 V gete drive devices • High speed switching Outline DPAK-1 4 4 D 1 2 G 3 S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr 2SJ527(L),2SJ527(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalenche current Avalenche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings –60 ±20 –5 –20 –5 –5 2.