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K1307 - 2SK1307

Key Features

  • Low on-resistance.
  • High speed switching.
  • 4 V gate drive device  Can be driven from 5 V source.
  • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220FM D G 1 2 3 1. Gate 2. Drain 3. Source S Datasheet pdf - http://www. DataSheet4U. net/ www. DataSheet. co. kr 2SK1307 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drai.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
K1306 2SK1306
K1315 2SK1316
K1316 2SK1316
K1317 2SK1317
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr 2SK1307 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-220FM D G 1 2 3 1. Gate 2. Drain 3. Source S Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr 2SK1307 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.