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K1567 - 2SK1567

Key Features

  • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-220FM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK1566, 2SK1567 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1566 2SK1567 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperat.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
K1515 2SK1515
K1518 2SK1518

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK1566, 2SK1567 Silicon N-Channel MOS FET Application www.DataSheet4U.com High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-220FM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK1566, 2SK1567 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1566 2SK1567 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature www.DataSheet4U.com Symbol VDSS Ratings 450 500 ±30 7 Unit V VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 V A A A W °C °C 28 7 35 150 –55 to +150 Note 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.