Datasheet4U Logo Datasheet4U.com

K1622 - Silicon N-Channel MOS FET

Features

  • Low on-resistance.
  • High speed switching.
  • Low drive current.
  • 4 V gate drive device  Can be driven from 5 V source.
  • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline November 1996 LDPAK 4 4 123 D 12 3 G S 1. Gate 2. Drain 3. Source 4. Drain 2SK1622(L), 2SK1622(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode rever.

📥 Download Datasheet

Datasheet preview – K1622

Datasheet Details

Part number K1622
Manufacturer Hitachi Semiconductor
File Size 27.27 KB
Description Silicon N-Channel MOS FET
Datasheet download datasheet K1622 Datasheet
Additional preview pages of the K1622 datasheet.

📁 Similar Datasheet

  • K1601 - Sinewave (MTRONPTI)
  • K1601T - CMOS/TTL (MTRONPTI)
  • K1601TE - TCVCXO (MTRONPTI)
  • K1602 - Sinewave (MTRONPTI)
  • K1602SE - TCVCXO (MTRONPTI)
  • K1602T - CMOS/TTL (MTRONPTI)
  • K1602TE - TCVCXO (MTRONPTI)
  • K1603 - 2SK1603 (Inchange Semiconductor)
  • K1603T - Oscillator (M-Tron Industries)
  • K1603TE - Oscillator (M-Tron Industries)
Other Datasheets by Hitachi Semiconductor

Full PDF Text Transcription

Click to expand full text
2SK1622(L), 2SK1622(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline November 1996 LDPAK 4 4 123 D 12 3 G S 1. Gate 2. Drain 3. Source 4. Drain 2SK1622(L), 2SK1622(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW≤10 µs, duty cycle ≤ 1% 2.
Published: |