Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter
Outline
TO-220FM
D G
1
2 3
1. Gate 2. Drain 3. Source
S
2SK1762
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty.
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
K1762. For precise diagrams, and layout, please refer to the original PDF.
2SK1762 Silicon N-Channel MOS FET Application www.DataSheet4U.com High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current N...
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s • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-220FM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK1762 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % www.DataSheet4U.com 2.
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K1762 Datasheet
