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K1808 - 2SK1808

Key Features

  • Low on-resistance.
  • High speed switching.
  • Low drive current.
  • No secondary breakdown.
  • Suitable for switchingregulator, DC-DC converter Outline TO-220FM D 12 3 1. Gate G 2. Drain 3. Source S 2SK1808 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
K1807 2SK1807
K1835 2SK1835

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK1808 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switchingregulator, DC-DC converter Outline TO-220FM D 12 3 1. Gate G 2. Drain 3. Source S 2SK1808 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2.